6
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1
TYPICAL CHARACTERISTICS, 450 - 520 MHz
Pout, OUTPUT POWER (WATTS)
Figure 13. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
Figure 14. Drain Efficiency versus Output Power
GAIN (dB)
Figure 15. Output Power versus Biasing Current
IDQ, BIASING CURRENT (mA)
Figure 16. Drain Efficiency versus Biasing Current
IDQ, BIASING CURRENT (mA)
Figure 17. Output Power versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
60
9
15
0
14
13
12
11
10
50
40
30
20
10
450 MHz
470 MHz
500 MHz
520 MHz
60
20
70
0
60
50
40
30
50
40
30
20
10
450 MHz
470 MHz
500 MHz
520 MHz
, DRAIN EFFICIENCY (%)
1200
30
50
200
45
40
35
1000
800
600
400
VDD
= 12.5 Vdc
Pin
= 34 dBm
450 MHz
470 MHz
500 MHz
520 MHz
1200
40
80
200
70
60
50
1000
800
600
400
VDD
= 12.5 Vdc
Pin
= 34 dBm
450 MHz
470 MHz
500 MHz
520 MHz
, DRAIN EFFICIENCY (%)
, DRAIN EFFICIENCY (%)
15
10
70
10
60
50
40
30
20
14
13
12
11
450 MHz
470 MHz
500 MHz
520 MHz
IDQ
= 250 mA
Pin
= 34 dBm
15
40
80
10
70
60
50
14
13
12
11
IDQ
= 250 mA
Pin
= 34 dBm
450 MHz
470 MHz
500 MHz
520 MHz
VDD
= 12.5 Vdc
VDD
= 12.5 Vdc
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